Репозиторий БГУИР: Browsing DSpace

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
А Б В Г Д Е Ж З И Й К Л М Н О П Р С Т У Ф Х Ц Ч Ш Щ Ъ Ы Ь Э Ю Я
or enter first few letters:

Showing results 1054 to 1073 of 40272 < previous next >

Issue Date	Title	Author(s)
2019	Electron tunneling to the surface states at photocatalysis	Sidorova, T. N.; Danilyuk, A. L.
2017	Electron tunneling to the surface states at photocatalysis	Sidorova, T.; Danilyuk, A. L.
2014	Electronic and dynamical properties of bulk and layered MoS2	Krivosheeva, A. V.; Shaposhnikov, V. L.; Borisenko, V. E.; Lazzari, J. L.
2023	Electronic and magnetic properties of doped 2D MoS2 /Ph systems	Krivosheeva, A. V.; Shaposhnikov, V. L.
2018	Electronic and optic properties of transition metal dichalcogenides (MoS2, WSe2) and graphene heterostructures	Baranava, M. S.; Hvazdouski, D. C.; Stempitsky, V. R.; Volchek, S. A.; Najbuk, M.
2022	Electronic finance in China: infrastructure development	Fei Yan
2020	Electronic methodological complex on the Discipline «Applied Mathematics» in English for international students	Malysheva, O. N.
2017	Electronic Properties of Bulk and Monolayer TMDs: Theoretical Study Within DFT Framework (GVJ-2e Method)	Gusakova, J.; Wang, X.; Shiau, L. L.; Krivosheeva, A. V.; Shaposhnikov, V. L.; Borisenko, V. E.; Gusakov, V. E.; Tay, B. K.
2017	Electronic properties of bulk and monolayer TMDs: theoretical study within DFT framework GVJ-2e method	Gusakova, J.; Wang, X.; Shiau, L. L.; Krivosheeva, A. V.; Shaposhnikov, V. L.; Borisenko, V. E.; Gusakov, V. E.; Tay, B. K.
2017	Electronic properties of graphene-based heterostructures	Skachkova, V. A.; Baranava, M. S.; Hvazdouski, D. C.; Stempitsky, V. R.
2017	Electronic properties of graphene-based heterostructures	Skachkova, V. A.; Baranava, M. S.; Hvazdouski, D. C.; Stempitsky, V. R.
2017	Electronic properties of phosphorene with vacancies: ab initio study	Skachkova, V.
2017	Electronic properties of phosphorene with vacancies: ab initio study	Skachkova, V.
2013	Electronic properties of quasi-two-dimensional molybdenum disulfide with cobalt impurities	Kozlova, O.; Nelayev, V.
2015	Electronic properties of semiconducting Ca2Si silicide: From bulk to nanostructures by means of first principles calculations	Borisenko, V. E.; Migas, D. B.; Bogorodz, V. O.; Filonov, A. B.; Shaposhnikov, V. L.; Galkin, N. G.
2017	Electronic properties of thin BaSi2 films with different orientations	Migas, D. B.; Bogorodz, V. O.; Krivosheeva, A. V.; Shaposhnikov, V. L.; Filonov, A. B.; Borisenko, V. E.
2019	Electronic properties of WS2/WSe2 heterostructure containing Te impurity: the role of substituting position	Krivosheeva, A. V.; Shaposhnikov, V. L.; Borisenko, V. E.; Lazzari, J. L.
2023	Electronic scientific and methodological journal “Informatics Pedagogy” for teachers in conditions of informatization of education	Kazachenok, V.; Vasilevsky, K.
2022	Electronic structure and optical properties of Ca2Si films grown on silicon different oriented substrates and calculated from first principles	Galkin, K. N.; Kropachev, O. V.; Maslov, A. M.; Chernev, I. M.; Subbotin, E. Yu.; Galkin, N. G.; Alekseev, A. Yu.; Migas, D. B.
2021	Electronic System of Language Skills Formation: Psychological Features of Foreign Language Teaching	Dadykin, A. K.; Murtatha Anwer Abdulwahid Al-Masoodi

Showing results 1054 to 1073 of 40272 < previous next >

Browsing by Title