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Issue Date	Title	Author(s)
2017	Electronic properties of bulk and monolayer TMDs: theoretical study within DFT framework GVJ-2e method	Gusakova, J.; Wang, X.; Shiau, L. L.; Krivosheeva, A. V.; Shaposhnikov, V. L.; Borisenko, V. E.; Gusakov, V. E.; Tay, B. K.
2017	Electronic properties of graphene-based heterostructures	Skachkova, V. A.; Baranava, M. S.; Hvazdouski, D. C.; Stempitsky, V. R.
2017	Electronic properties of graphene-based heterostructures	Skachkova, V. A.; Baranava, M. S.; Hvazdouski, D. C.; Stempitsky, V. R.
2017	Electronic properties of phosphorene with vacancies: ab initio study	Skachkova, V.
2017	Electronic properties of phosphorene with vacancies: ab initio study	Skachkova, V.
2013	Electronic properties of quasi-two-dimensional molybdenum disulfide with cobalt impurities	Kozlova, O.; Nelayev, V.
2015	Electronic properties of semiconducting Ca2Si silicide: From bulk to nanostructures by means of first principles calculations	Borisenko, V. E.; Migas, D. B.; Bogorodz, V. O.; Filonov, A. B.; Shaposhnikov, V. L.; Galkin, N. G.
2017	Electronic properties of thin BaSi2 films with different orientations	Migas, D. B.; Bogorodz, V. O.; Krivosheeva, A. V.; Shaposhnikov, V. L.; Filonov, A. B.; Borisenko, V. E.
2019	Electronic properties of WS2/WSe2 heterostructure containing Te impurity: the role of substituting position	Krivosheeva, A. V.; Shaposhnikov, V. L.; Borisenko, V. E.; Lazzari, J. L.
2023	Electronic scientific and methodological journal “Informatics Pedagogy” for teachers in conditions of informatization of education	Kazachenok, V.; Vasilevsky, K.
2022	Electronic structure and optical properties of Ca2Si films grown on silicon different oriented substrates and calculated from first principles	Galkin, K. N.; Kropachev, O. V.; Maslov, A. M.; Chernev, I. M.; Subbotin, E. Yu.; Galkin, N. G.; Alekseev, A. Yu.; Migas, D. B.
2021	Electronic System of Language Skills Formation: Psychological Features of Foreign Language Teaching	Dadykin, A. K.; Murtatha Anwer Abdulwahid Al-Masoodi
2017	Electrophysical properties of transition metals chalcogenides structures used as structural elements of the nanoelectronics devices	Baranava, M. S.; Najbuk, M.; Hvazdouski, D. C.; Stempitsky, V. R.
2019	Elements of gamification in distance and blended learning for Boolean algebra course	Bolibok, O. V.; Shirokopetleva, M. S.
2017	Elements of Information Security in Integration Corporate Information System on Base of Intelligence Technologies Use	Vishniakou, U. A.; Gondag Sas, M. M.; Mozdurani M. G. Shiraz
2020	Elliptic curve cryptography	Высоцкий, Г. В.; Супринович, И. Ю.
2018	Elon Musk: contribution to the modern sciences	Kondratyev, T. D.; Kaplin, R. V.
2022	Email phishing: structure and distinguishing features	Bychek, M. N.
2017	Embedded distributed arithmetic based quaternions multiplier of paraunitary filter bank for lossless-to-lossy image coding	Petrovsky, N. A.; Rybenkov, E. V.; Petrovsky, A. A.
2014	Embeddings of Almost Hermitian Manifold in Almost Hyper Hermitian Manifold and Complex (Hypercomplex) Numbers in Riemannian Geometry	Ermolitski, A. A.

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