Skip navigation
Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/10175
Title: Electrochemical Deposition and Characterization of Ni in Mesoporous Silicon
Authors: Prischepa, S. L.
Dolgiy, A. L.
Redko, S. V.
Bandarenka, H. V.
Yanushkevich, K. I.
Nenzi, P.
Balucani, M.
Bondarenko, V. P.
Keywords: публикации ученых
Issue Date: 2012
Publisher: Journal of The Electrochemical Society
Citation: Electrochemical Deposition and Characterization of Ni in Mesoporous Silicon / A. Dolgiy and others // Journal of The Electrochemical Society. – 2012. – V. 159. – Р. 623 – 627.
Abstract: Nickel nanowires have been formed by stationary electrochemical deposition of nickel into mesoporous silicon templates from the modified Watts bath. Monitoring of the porous silicon potential during the electrochemical deposition has given the determination of the emergence of Ni on the outer surface of porous layer. Maximum filling factor of porous silicon with Ni has been achieved to 67%. The pore dimensions have been found to define the length and diameter of the Ni nanowires that have equaled to 10 μm and 100–120 nm, respectively. The polycrystalline nature of the nickel nanowires, as well as the expansion of nickel lattice constant in comparison with bulk material has been established by analyzing the X-ray diffraction spectra. The synthesized samples have possessed ferromagnetic properties, which have been confirmed by temperature measurements of the magnetization. Smaller values of the specific magnetization of the Ni/PS samples and the atomic magnetic moment of Ni atoms at the low temperature with respect to those of bulk material have been suggested to be mostly caused by formation of nickel silicide at the beginning of the Ni electrochemical deposition.
URI: https://libeldoc.bsuir.by/handle/123456789/10175
Appears in Collections:Публикации в зарубежных изданиях

Files in This Item:
File Description SizeFormat 
Prishchepa_Electrochemical.pdf652.54 kBAdobe PDFView/Open
Show full item record Google Scholar

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.