| DC Field | Value | Language |
|---|
| dc.contributor.author | Balucani, M. | - |
| dc.contributor.author | Bondarenko, V. P. | - |
| dc.contributor.author | Franchina, L. | - |
| dc.contributor.author | Lamedica, G. | - |
| dc.contributor.author | Yakovtseva, V. A. | - |
| dc.contributor.author | Ferrari, A. | - |
| dc.date.accessioned | 2016-12-14T12:17:51Z | - |
| dc.date.accessioned | 2017-07-27T12:27:35Z | - |
| dc.date.available | 2016-12-14T12:17:51Z | - |
| dc.date.available | 2017-07-27T12:27:35Z | - |
| dc.date.issued | 1999 | - |
| dc.identifier.citation | A model of radiative recombination in n-type porous silicon-aluminum Schottky junction / M. Balucani and others // Applied Physics Letters. - 1999. - Vol. 74. - Issue 14 . - P. 1960. - DOI: http://dx.doi.org/10.1063/1.123741 | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/10856 | - |
| dc.description.abstract | It is common knowledge that silicon emits visible light in its breakdown condition, but it is also known to have low efficiency. In this letter, we report an in-depth analysis of data for light emitting devices based on porous silicon. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | American Institute of Physics | ru_RU |
| dc.subject | публикации ученых | ru_RU |
| dc.subject | Schottky barriers | ru_RU |
| dc.subject | P-N junctions | ru_RU |
| dc.subject | Silicon | ru_RU |
| dc.subject | Luminescence | ru_RU |
| dc.subject | Light emitting diodes | ru_RU |
| dc.title | A model of radiative recombination in n-type porous silicon-aluminum Schottky junction | ru_RU |
| dc.type | Article | ru_RU |
| Appears in Collections: | Публикации в зарубежных изданиях
|
