Please use this identifier to cite or link to this item:
https://libeldoc.bsuir.by/handle/123456789/28088
| Title: | Effect of charged clusters on the diffusion of impurity atoms in silicon crystals |
| Authors: | Velichko, O. I. |
| Keywords: | публикации ученых;diffusion;segregation;cluster;impurity;silicon |
| Issue Date: | 2017 |
| Publisher: | Голландия |
| Citation: | Velichko, O. I. Effect of charged clusters on the diffusion of impurity atoms in silicon crystals / O. I. Velichko // Journal of Engineering Physics and Thermophysics. ― 2017. ― Vol. 90, No. 3― Рp. 725-728. - DOI 10.1007/s10891-017-1621-y. |
| Abstract: | An equation of diffusion of impurity atoms in silicon crystals has been obtained, based on which the influence of charged clusters in a silicon crystal on the process of impurity transfer can be determined. It is shown that a characteristic feature of this effect is the appearance of an additional flux of impurity atoms, which is capable of leading to impurity segregation. |
| URI: | https://libeldoc.bsuir.by/handle/123456789/28088 |
| Appears in Collections: | Публикации в зарубежных изданиях
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