| DC Field | Value | Language |
|---|
| dc.contributor.author | Velichko, O. I. | - |
| dc.contributor.author | Aksenov, V. V. | - |
| dc.date.accessioned | 2017-12-01T08:31:07Z | - |
| dc.date.available | 2017-12-01T08:31:07Z | - |
| dc.date.issued | 2017 | - |
| dc.identifier.citation | Velichko, O. I. Analytical solution of equations set describing diffusion of point defects in the 2-layer semiconductor structure / O. I. Velichko, V. V. Aksenov // Doklady BGUIR. - 2017. - Vol. 109, № 7. - Р. 20 - 24. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/28211 | - |
| dc.description.abstract | The boundary-value problem on impurity and point defect diffusion in the 2-layer semiconductor
structure was formulated and analyzed. The analytical solution of the set of equations describing diffusion
of intrinsic point defects was obtained for the case of the constant coefficients of these equations. Calculation
of the typical distribution of point defects in the 2-layer structure was carried out. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | БГУИР | ru_RU |
| dc.subject | доклады БГУИР | ru_RU |
| dc.subject | silicon | ru_RU |
| dc.subject | SiGe | ru_RU |
| dc.subject | impurity | ru_RU |
| dc.subject | defect | ru_RU |
| dc.subject | diffusion equation | ru_RU |
| dc.subject | analytical solution | ru_RU |
| dc.title | Analytical solution of equations set describing diffusion of point defects in the 2-layer semiconductor structure | ru_RU |
| dc.type | Статья | ru_RU |
| Appears in Collections: | №7 (109)
|
