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Issue Date	Title	Author(s)
2017	Parallel computing environment for digital devices simulation and VLSI topology verification	Belous, A.; Solodukha, V.; Shvedov, S.; Borovik, A.; Kostrov, A.; Stempitsky, V.
2017	Investigation of the radiations effect on the electrical characteristics of a junction field-effect transistor	Dvornikov, O.; Lovshenko, I.; Stempitsky, V.; Khanko, V.
2017	Electrophysical properties of transition metals chalcogenides structures used as structural elements of the nanoelectronics devices	Baranava, M.; Najbuk, M.; Hvazdouski, D.; Stempitsky, V.
2017	Exchange interaction in zinc oxide doped by cobalt	Baranava, M.; Danilyuk, A.; Stempitsky, V.
2017	Optimization of structural and technological parameters of junction field-effect transistor with increased radiation hardness	Dvornikov, O.; Lovshenko, I.; Stempitsky, V.; Khanko, V.
2017	Ab initio simulation of graphene interaction with SiO2 substrate for nanoelectronics application	Hvazdouski, D.; Stempitsky, V.
2013	Screening design and device/technology deep- submicron MOSFET simulation	Borovik, A.; Trung Tran Tuan; Stempitsky, V.
2013	Simulation of interaction between bacillus subtilis bacteria and silicon surface	Nelayev, V.; Burko, V.; Stempitsky, V.; Kolomiets, E.; Kuptsov, V.; Berezhnaya, A.