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Дата публикации	Название	Автор(ы)
2017	Gate leakage current in AlGaN Schottky diode in terms of phonon-assisted tunneling model	Volcheck, V.
2017	Emission properties of an array of silicon nanocones	Trafimenko, A.; Danilyuk, A. L.
2017	Electronic properties of phosphorene with vacancies: ab initio study	Skachkova, V.
2017	Electron tunneling to the surface states at photocatalysis	Sidorova, T.; Danilyuk, A. L.
2017	Study of the thermal stability of anodic alumina films on aluminum	Shulgov, V. V.
2017	RF mems modulator simulation	Shukevich, Y.; Douhaya, Y.
2017	Effects of grain size on the charge carrier mobility of BaSi2 polycrystaline thin film	Shohonov, D.; Samusevich, I.; Filonov, A. B.; Migas, D. B.
2017	Breakdown and conductivity switching in nanosized hafnium dioxide	Podryabinkin, D.; Danilyuk, A. L.
2017	Simulation of the optical waves interaction with nanostructure thin aluminum-nickel films	Pechen, T.; Prudnik, A. M.
2017	Analysis and digital processing of sem images of anodic alumina films with nanoporous structure	Lushpa, N.; Dinh, T.
2017	Ab initio simulation of graphene interaction with SiO2 substrate for nanoelectronics application	Hvazdouski, D. C.; Stempitsky, V.
2017	Surface plasmons in graphene heterostructure	Felsharuk, A. V.; Danilyuk, A. L.
2017	Optimization of structural and technological parameters of junction field-effect transistor with increased radiation hardness	Dvornikov, O. V.; Lovshenko, I.; Stempitsky, V.; Khanko, V. T.
2017	Investigation of the radiations effect on the electrical characteristics of a junction field-effect transistor	Dvornikov, O. V.; Lovshenko, I.; Stempitsky, V.; Khanko, V. T.
2017	Approaches to implementation of the ion-sensitive field-effect transistor compact models	Dao Dinh Ha
2017	Calculating and modeling of integrated displacement systems for precision equipment of micro- and nanoelectronics	Dainiak, I. V.; Kuznetsov, V.; Karpovich, S. E.
2017	Parallel computing environment for digital devices simulation and VLSI topology verification	Belous, A. I.; Solodukha, V.; Shvedov, S.; Borovik, A. M.; Kostrov, A. I.; Stempitsky, V. R.
2017	Exchange interaction in zinc oxide doped by cobalt	Baranava, M. S.; Danilyuk, A. L.; Stempitsky, V. R.
2017	Electrophysical properties of transition metals chalcogenides structures used as structural elements of the nanoelectronics devices	Baranava, M. S.; Najbuk, M.; Hvazdouski, D. C.; Stempitsky, V. R.
2017	Peculiarities of magnetoresistance of the spin valve with an antiferromagnetic layer	Baiman, G. B.; Bogutsky, A.; Danilyuk, A. L.