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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/29081
Title: Gate leakage current in AlGaN Schottky diode in terms of phonon-assisted tunneling model
Authors: Volcheck, V.
Keywords: материалы конференций
gate leakage current
Schottky diode
phonon-assisted tunneling model
Issue Date: 2017
Publisher: БГУИР
Citation: Volcheck, V. Gate leakage current in AlGaN Schottky diode in terms of phonon-assisted tunneling model / V. Volcheck // Nano-design, technology, computer simulations : proceedings of 17th International workshop on new approaches to high –tech (26-27 October, 2017). – Minsk : BSUIR, 2017. – С. 178 - 180.
URI: https://libeldoc.bsuir.by/handle/123456789/29081
Appears in Collections:NDTCS 2017

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