| DC Field | Value | Language |
|---|
| dc.contributor.author | Volcheck, V. | - |
| dc.date.accessioned | 2018-01-09T13:55:44Z | - |
| dc.date.available | 2018-01-09T13:55:44Z | - |
| dc.date.issued | 2017 | - |
| dc.identifier.citation | Volcheck, V. Gate leakage current in AlGaN Schottky diode in terms of phonon-assisted tunneling model / V. Volcheck // Nano-design, technology, computer simulations : proceedings of 17th International workshop on new approaches to high –tech (26-27 October, 2017). – Minsk : BSUIR, 2017. – С. 178 - 180. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/29081 | - |
| dc.language.iso | en | ru_RU |
| dc.publisher | БГУИР | ru_RU |
| dc.subject | материалы конференций | ru_RU |
| dc.subject | gate leakage current | ru_RU |
| dc.subject | Schottky diode | ru_RU |
| dc.subject | phonon-assisted tunneling model | ru_RU |
| dc.title | Gate leakage current in AlGaN Schottky diode in terms of phonon-assisted tunneling model | ru_RU |
| dc.type | Статья | ru_RU |
| Appears in Collections: | NDTCS 2017
|
