Skip navigation
Please use this identifier to cite or link to this item:
Title: Grain effect in the carrier mobility of BaSi2 nanofilms
Authors: Shohonov, D. A.
Samusevich, I. S.
Filonov, A. B.
Migas, D. B.
Morita, K.
Suemasu, T.
Keywords: публикации ученых
Barium silicide
electron mobility
grain boundaries
Issue Date: 2017
Publisher: World Scientific, Singapore
Citation: Grain effect in the carrier mobility of BaSi2 nanofilms / D. A. Shohonov and other // Nanomeeting – 2017: рroceedings of International Conference in Physics, Chemistry and Application of Nanostructures. – Singapore: World Scientific, 2017. – Р. 38 – 41. –
Abstract: According to the experimental data the electron mobility of BaSi2 nanofilms has rather high values, as compared with other semiconducting silicides, reaching 1230 cm2/Vs at 218 K and 816 cm2/Vs at 300 K. We demonstrate that the temperature dependence of the mobility cannot be adequately reproduced by the use of standard carrier scattering mechanisms. The modified approach which accounts for the grained nature of the films was proposed for the correct description of the mobility behavior.
Appears in Collections:Публикации в изданиях других стран

Files in This Item:
File Description SizeFormat 
Shohonov_Grain.pdf129,98 kBAdobe PDFView/Open
Show full item record

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.