Skip navigation
Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/29498
Title: Temperature-dependent selective growth of carbon nanotubes in Si/SiO2 structures for field emitter array applications
Authors: Labunov, V.
Grapov, D.
Lim Yu Dian
Hu Liangxing
Avramchuck, A. V.
Tay Beng Kang
Aditya Sheel
Miao Jianmin
Keywords: публикации ученых
nanostructures
vapor deposition
microstructure
electron microscopy
electrical properties
Issue Date: 2017
Publisher: Elsevier Science Publishing Company, Inc., USA
Citation: Temperature-dependent selective growth of carbon nanotubes in Si/SiO2 structures for field emitter array applications / V. Labunov and other // Materials Research Bulletin. – 2017. – V.95. – Р. 129 – 137. – DOI: 10.1016/j.materresbull.2017.07.022.
Abstract: Temperature-dependent selective growth of Carbon Nanotubes (CNTs) in Si/SiO2 structures using ferrocene/xylene volatile catalyst source and its application in Field Emitter Array (FEA) is demonstrated in this work. CNTs are grown directly on Si/SiO2 substrates by volatile catalyst source (Ferrocene/Xylene) Chemical Vapor Deposition (CVD) technique and the effect of growth temperatures (760–880 °C) on CNT height and crystallinity has been studied. Selective growth of CNTs on Si substrates is achieved at 790 °C growth temperature. Using the obtained selective growth condition, CNT FEAs are fabricated by growing CNT bundles selectively on the Si surface of the pre-fabricated SiO2 pits on a Si wafer. Field emission current density above 100 mA/cm² is obtained from inter-pit separation distances of 4–10 μm. These results show the potential of ferrocene/xylene catalyst source in achieving selective growth of CNTs in Si/SiO2 structures for FEA application.
URI: https://libeldoc.bsuir.by/handle/123456789/29498
Appears in Collections:Публикации в изданиях других стран

Files in This Item:
File Description SizeFormat 
Lim_Temperature.pdf5,55 MBAdobe PDFView/Open
Show full item record


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.