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Название: The growth and electrical properties of tantalum nanowires self-organized under the porous alumina film
Авторы: Mozalev, A. M.
Gorokh, G. G.
Pligovka, A. N.
Mozaleva, I. I.
Ключевые слова: публикации ученых;metal bilayers;self-organized arrays;organized network;valve-metal nanowires;tantalum nanowire;ionic transport mechanism
Дата публикации: 2004
Издательство: Institute of Inorganic Chemistry Academy of Sciences of the Czech Republic
Описание: The growth and electrical properties of tantalum nanowires self-organized under the porous alumina film / A. Mozalev [et al.] // Solid State Chemistry, Prague, September 13–17 2004 / Institute of Inorganic Chemistry Academy of Sciences of the Czech Republic. – Prague, 2004. – P. 158.
Аннотация: The development of material components at nanoscale whose structures exhibit novel physical and chemical properties has been the current trend in science and technology. Anodizing under certain conditions of sputter-deposited Ta-AI, Nb-AI, and Ti-AI metal bilayers results in formation of self-organized arrays of nano-sized anodic oxides of unique morphologies and complex chemical compositions. However, the detailed knowledge of these nanostructures is not currently complemented by a fundamental understanding of the growth and properties of self- organized network of valve-metal nanowires, which concurrently forms under the porous alumina film. In this paper, characteristic patterns of metal-oxide nanostructures derived from anodically oxidized Ta-AI bilayers have been prepared and characterized to obtain new insight into the growth and electric transport mechanism in the self-organized valve-metal nanowires.
URI: https://libeldoc.bsuir.by/handle/123456789/31643
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