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dc.contributor.authorVelichko, O. I.-
dc.contributor.authorВеличко, О. И.-
dc.date.accessioned2018-05-28T13:32:48Z-
dc.date.available2018-05-28T13:32:48Z-
dc.date.issued2018-
dc.identifier.citationVelichko, O. I. Radiation-enhanced diffusion of phosphorus in silicon / O. I. Velichko // Nonlinear Phenomena in Complex Systems. – 2018. - Vol. 21, No. 1. - Рp. 79 – 91.ru_RU
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/31687-
dc.description.abstractModeling of the phosphorus radiation-enhanced diffusion in the course of implantation of high-energy protons into an elevated-temperature silicon substrate and during its treatment in a hydrogen-containing plasma was carried out. It follows from the results obtained that the radiation-enhanced diffusion occurs by means of formation, migration, and dissociation of “impurity atom – silicon self-interstitial” pairs being in a local thermodynamic equilibrium with substitutionally dissolved impurity and nonequilibrium point defects generated due to external irradiation. The decrease of the average migration length with the proton energy can be due to the interaction of silicon self-interstitials with the vacancies generated at the surface or with the defects formed in the phosphorus implanted region. Based on the pair diffusion mechanism, a theoretical investigation of the form of impurity profiles that can be created in thin silicon layers due to the radiation-enhanced diffusion was carried out.ru_RU
dc.language.isoenru_RU
dc.publisherEducation and Upbringing, Минск, Беларусьru_RU
dc.subjectпубликации ученыхru_RU
dc.subjectmodelingru_RU
dc.subjectradiation-enhanced diffusionru_RU
dc.subjectpoint defectsru_RU
dc.subjectphosphorusru_RU
dc.subjectsiliconru_RU
dc.titleRadiation-enhanced diffusion of phosphorus in siliconru_RU
dc.typeСтатьяru_RU
Appears in Collections:Публикации в изданиях Республики Беларусь

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