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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/33034
Title: The dependence of gallium nitride nanowires properties on synthesis pressure and temperature
Authors: Danilyuk, M.
Messanvi, A.
Keywords: материалы конференций
Gallium Nitride
photoluminescence
Issue Date: 2013
Publisher: БГУИР
Citation: Danilyuk, M. The dependence of gallium nitride nanowires properties on synthesis pressure and temperature / M. Danilyuk, A. Messanvi // Nano-Design, Technology, Computer Simulation — NDTCS ’ 2013: proceedings of the 15th International Workshop on New Approaches to High-Tech, Minsk, June 11–15, 2013 / BSUIR. - Minsk, 2013. - P. 21 – 22.
Abstract: The main task of the investigation was to perform the synthesis of gallium nitride nanowires using a low pressure chemical vapor deposition system. The nanowires were grown via a catalyst-assisted reaction based on the vapor-liquid-solid mechanism. The influences of catalyst, temperature and pressure on the growth of gallium nitride nanowires were explored. Optimal results were obtained at a temperature of 750oC and a pressure of 400 to 500 mTorr.
URI: https://libeldoc.bsuir.by/handle/123456789/33034
Appears in Collections:NDTCS 2013

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