The dependence of gallium nitride nanowires properties on synthesis pressure and temperature

Abstract

The main task of the investigation was to perform the synthesis of gallium nitride nanowires using a low pressure chemical vapor deposition system. The nanowires were grown via a catalyst-assisted reaction based on the vapor-liquid-solid mechanism. The influences of catalyst, temperature and pressure on the growth of gallium nitride nanowires were explored. Optimal results were obtained at a temperature of 750oC and a pressure of 400 to 500 mTorr.