Skip navigation
Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/33072
Full metadata record
DC FieldValueLanguage
dc.contributor.authorLovshenko, I.-
dc.contributor.authorNelayev, V.-
dc.contributor.authorBelous, A.-
dc.contributor.authorTurtsevich, A.-
dc.date.accessioned2018-10-01T08:00:16Z-
dc.date.available2018-10-01T08:00:16Z-
dc.date.issued2013-
dc.identifier.citationDevice and technology simulation of IGBT on SOI structure / I. Lovshenko and other // Nano-Design, Technology, Computer Simulation — NDTCS ’ 2013: proceedings of the 15th International Workshop on New Approaches to High-Tech, Minsk, June 11–15, 2013 / BSUIR. - Minsk, 2013. - P. 79 – 81.ru_RU
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/33072-
dc.description.abstractStatic and dynamics characteristics of the power IGBT device at “Silicon-On-Insulate” structure were simulated. Analysis of the characteristics of such structure in comparison with the IGBT at the bulk silicon are presented. Advantages of IGBT device at SOI are revealed.ru_RU
dc.language.isoenru_RU
dc.publisherБГУИРru_RU
dc.subjectматериалы конференцийru_RU
dc.subjecttechnology «Silicon–On-Insulator»ru_RU
dc.subjectfield transistorsru_RU
dc.titleDevice and technology simulation of IGBT on SOI structureru_RU
dc.typeСтатьяru_RU
Appears in Collections:NDTCS 2013

Files in This Item:
File Description SizeFormat 
Lovshenko_Device.pdf92,33 kBAdobe PDFView/Open
Show simple item record


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.