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dc.contributor.authorLovshenko, I.-
dc.contributor.authorNelayev, V.-
dc.contributor.authorBelous, A.-
dc.contributor.authorTurtsevich, A.-
dc.identifier.citationDevice and technology simulation of IGBT on SOI structure / I. Lovshenko and other // Nano-Design, Technology, Computer Simulation — NDTCS ’ 2013: proceedings of the 15th International Workshop on New Approaches to High-Tech, Minsk, June 11–15, 2013 / BSUIR. - Minsk, 2013. - P. 79 – 81.ru_RU
dc.description.abstractStatic and dynamics characteristics of the power IGBT device at “Silicon-On-Insulate” structure were simulated. Analysis of the characteristics of such structure in comparison with the IGBT at the bulk silicon are presented. Advantages of IGBT device at SOI are revealed.ru_RU
dc.subjectматериалы конференцийru_RU
dc.subjecttechnology «Silicon–On-Insulator»ru_RU
dc.subjectfield transistorsru_RU
dc.titleDevice and technology simulation of IGBT on SOI structureru_RU
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