| DC Field | Value | Language |
|---|
| dc.contributor.author | Lovshenko, I. Yu. | - |
| dc.contributor.author | Nelayev, V. V. | - |
| dc.contributor.author | Belous, A. I. | - |
| dc.contributor.author | Turtsevich, A. | - |
| dc.date.accessioned | 2018-10-01T08:00:16Z | - |
| dc.date.available | 2018-10-01T08:00:16Z | - |
| dc.date.issued | 2013 | - |
| dc.identifier.citation | Device and technology simulation of IGBT on SOI structure / I. Lovshenko and other // Nano-Design, Technology, Computer Simulation — NDTCS ’ 2013: proceedings of the 15th International Workshop on New Approaches to High-Tech, Minsk, June 11–15, 2013 / BSUIR. - Minsk, 2013. - P. 79 – 81. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/33072 | - |
| dc.description.abstract | Static and dynamics characteristics of the power IGBT device at “Silicon-On-Insulate” structure
were simulated. Analysis of the characteristics of such structure in comparison with the IGBT at the bulk
silicon are presented. Advantages of IGBT device at SOI are revealed. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | БГУИР | ru_RU |
| dc.subject | материалы конференций | ru_RU |
| dc.subject | technology «Silicon–On-Insulator» | ru_RU |
| dc.subject | field transistors | ru_RU |
| dc.title | Device and technology simulation of IGBT on SOI structure | ru_RU |
| dc.type | Статья | ru_RU |
| Appears in Collections: | NDTCS 2013
|
