https://libeldoc.bsuir.by/handle/123456789/33073| Title: | Concept of new compact model of deep-submicron MOSFET |
| Authors: | Nelayev, V. Tran Tuan Trung |
| Keywords: | материалы конференций;deep submicron;submicron MOSFET |
| Issue Date: | 2013 |
| Publisher: | БГУИР |
| Citation: | Nelayev, V. Concept of new compact model of deep-submicron MOSFET / V. Nelayev, Tran Tuan Trung // Nano-Design, Technology, Computer Simulation — NDTCS ’ 2013: proceedings of the 15th International Workshop on New Approaches to High-Tech, Minsk, June 11–15, 2013 / BSUIR. - Minsk, 2013. - P. 70 – 72. |
| Abstract: | Concept of new compact model for the simulation of deep submicron (DSM), nanometer-scale MOFFET transistor characteristics is presented. The proposed model is based on the use of traditional “compact” submicron MOSFET device model. Parameters of this model are verified by means of fitting procedure to results obtained by use exact physical models taking into account quantum effects accompanying charge carriers transfer in DSM MOSFET. |
| URI: | https://libeldoc.bsuir.by/handle/123456789/33073 |
| Appears in Collections: | NDTCS 2013 |
| File | Description | Size | Format | |
|---|---|---|---|---|
| Nelayev_Concept.pdf | 98.6 kB | Adobe PDF | View/Open |
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