Skip navigation
Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/33073
Title: Concept of new compact model of deep-submicron MOSFET
Authors: Nelayev, V.
Tran Tuan Trung
Keywords: материалы конференций
deep submicron
submicron MOSFET
Issue Date: 2013
Publisher: БГУИР
Citation: Nelayev, V. Concept of new compact model of deep-submicron MOSFET / V. Nelayev, Tran Tuan Trung // Nano-Design, Technology, Computer Simulation — NDTCS ’ 2013: proceedings of the 15th International Workshop on New Approaches to High-Tech, Minsk, June 11–15, 2013 / BSUIR. - Minsk, 2013. - P. 70 – 72.
Abstract: Concept of new compact model for the simulation of deep submicron (DSM), nanometer-scale MOFFET transistor characteristics is presented. The proposed model is based on the use of traditional “compact” submicron MOSFET device model. Parameters of this model are verified by means of fitting procedure to results obtained by use exact physical models taking into account quantum effects accompanying charge carriers transfer in DSM MOSFET.
URI: https://libeldoc.bsuir.by/handle/123456789/33073
Appears in Collections:NDTCS 2013

Files in This Item:
File Description SizeFormat 
Nelayev_Concept.pdf98,6 kBAdobe PDFView/Open
Show full item record


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.