Skip navigation
Please use this identifier to cite or link to this item:
Title: Ab-initio simulation of vanadium oxide electronic properties
Authors: Koleshko, V.
Gulay, A.
Gulay, V.
Bobachenok, I.
Kozlova, O.
Nelayev, V.
Keywords: материалы конференций
Issue Date: 2013
Publisher: БГУИР
Citation: Ab-initio simulation of vanadium oxide electronic properties / V. Koleshko and other // Nano-Design, Technology, Computer Simulation — NDTCS ’ 2013: proceedings of the 15th International Workshop on New Approaches to High-Tech, Minsk, June 11–15, 2013 / BSUIR. - Minsk, 2013. - P. 118 – 119.
Abstract: The modeling of the electronic properties of vanadium oxides with the effect of the Mott— Hubbard was conducted. Software package VASP was used as the simulation tool, in particular,r method of augmented plane wave (PAW-method). Calculated electron densities and the band structures of vanadium compounds of homologous series VnOn+1 and VnOn-1 are presented.
Appears in Collections:NDTCS 2013

Files in This Item:
File Description SizeFormat 
Koleshko_Ab.pdf216,78 kBAdobe PDFView/Open
Show full item record

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.