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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/3575
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dc.contributor.authorTresh, A. M.
dc.date.accessioned2015-03-09T12:23:58Z
dc.date.accessioned2017-07-19T08:28:21Z-
dc.date.available2015-03-09T12:23:58Z
dc.date.available2017-07-19T08:28:21Z-
dc.date.issued2012
dc.identifier.citationTresh, A. M. The basic electrical characteristics of silicon cells / А. М. Tresh // Информационные технологии и системы 2012 (ИТС 2012) : материалы международной научной конференции, БГУИР, Минск, Беларусь, 24 октября 2012 г. = Information Technologies and Systems 2012 (ITS 2012) : Proceeding of The International Conference, BSUIR, Minsk, 24th October 2012 / редкол. : Л. Ю. Шилин [и др.]. – Минск : БГУИР, 2012. – C. 28–29.ru_RU
dc.identifier.isbn978-985-488-926-9
dc.identifier.urihttp://libeldoc.bsuir.by/handle/123456789/3575
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/3575-
dc.description.abstractThe basic electrical characteristics of silicon cells have been fully discussed in this paper.ru_RU
dc.language.isoenru_RU
dc.publisherБГУИРru_RU
dc.subjectматериалы конференцийru_RU
dc.subjectsilicon cellsru_RU
dc.subjectphotovoltaic receiverru_RU
dc.subjectcell series resistanceru_RU
dc.subjectкремниевые элементыru_RU
dc.subjectэлектрические характеристикиru_RU
dc.titleThe basic electrical characteristics of silicon cellsru_RU
dc.typeArticleru_RU
Appears in Collections:ИТС 2012

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