|Title:||Field Emission in Silicon Vacuum Nanostructure|
|Authors:||Trafimenko, A. G.|
Podryabinkin, D. A.
Danilyuk, A. L.
|Publisher:||World Scientific Publishing Co Pte Ltd, Singapure|
|Citation:||Trafimenko, A. G. Field Emission in Silicon Vacuum Nanostructure / A. G. Trafimenko, D. A. Podryabinkin, A. L. Danilyuk // International Journal of Nanoscience. – 2019 – Vol. 18, № 3-4. – P. 1940092-1-1940092 -4. – DOI: 10.1142/s0219581x19400921.|
|Abstract:||Transmission coefficient and field emission current in a silicon vacuum nanostructure with a pyramidal cathode were calculated as a function of applied voltage, size of the cathode and distance between the anode and cathode by the phase function method. The field emission current density in the range of 1–10 A/cm2 was found to be achieved by varying the distance between the anode and cathode in the range of 15–25nm and the applied voltage in the range of 1.2–2.3V.|
|Appears in Collections:||Публикации в изданиях других стран|
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