| DC Field | Value | Language |
|---|
| dc.contributor.author | Vorobjova, A. I. | - |
| dc.contributor.author | Labunov, V. A. | - |
| dc.contributor.author | Outkina, E. A. | - |
| dc.contributor.author | Khodin, A. A. | - |
| dc.coverage.spatial | Luxembourg | - |
| dc.date.accessioned | 2022-12-01T11:46:50Z | - |
| dc.date.available | 2022-12-01T11:46:50Z | - |
| dc.date.issued | 2022 | - |
| dc.identifier.citation | Local electrochemical deposition of Ni into vertical vias in Si/SiO2 substrate / A. I. Vorobjova [et al.] // Microsystem Technologies. – 2022. – Vol. 58, № 6. – P. 1925-1933. – DOI : https://doi.org/10.1007/s00542-022-05335-3. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/49243 | - |
| dc.description.abstract | Ni electrochemical deposition into a matrix of various
diameters (500–2000 nm) vertical vias in Si/SiO2 substrates with a
barrier layer at the vias’ bottom has been investigated. Morphological
study of Ni deposits in the vias showed they are deposited directly on
the surface of the barrier layer. Repeatability and stability in
combination with a homogeneous structure and 70% filling degree of
vias determine the prospects of the Si/SiO2/Ni system as a basic element
for the creation of three-dimensional micro-, nanostructures, and 3D
assembly of IC crystals. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | Springer Link | ru_RU |
| dc.subject | публикации ученых | ru_RU |
| dc.subject | electrochemical deposition | ru_RU |
| dc.subject | vertical vias | ru_RU |
| dc.title | Local electrochemical deposition of Ni into vertical vias in Si/SiO2 substrate | ru_RU |
| dc.type | Article | ru_RU |
| Appears in Collections: | Публикации в зарубежных изданиях
|
