https://libeldoc.bsuir.by/handle/123456789/6732
Название: | Influence of Si conductivity type on immersion deposition of Cu films on porous Si |
Авторы: | Dolgiy, A. L. Bandarenka, H. V. Petrovich, V. |
Ключевые слова: | публикации ученых |
Дата публикации: | 2015 |
Описание: | Dolgiy, A. L. Influence of Si conductivity type on immersion deposition of Cu films on porous Si / A. Dolgiy, H. Bandarenka, V. Petrovich // Physics, Chemistry and application of Nanostructures, 2015. - 5 р. |
Аннотация: | An immersion deposition of copper (Cu) on a porous silicon (PS) from an aqueous solution of the copper sulfate (CuSO4) and hydrofluoric acid (HF) has been performed. The PS based on n+- and p+-silicon (Si) wafers has been used to study the Cu deposition depending on the conductivity type of the initial Si substrate. The PS/n+-Si substrate has been found to allow the deposition of the nanostructured Cu films on the PS, while the PS/p+-Si has been shown to provide the formation of the porous Cu films by the complete substitution of the Si atoms in the PS with the Cu atoms. |
URI: | https://libeldoc.bsuir.by/handle/123456789/6732 |
Располагается в коллекциях: | Публикации в зарубежных изданиях |
Файл | Описание | Размер | Формат | |
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INFLUENCE OF Si CONDUCTIVITY.pdf | 435.24 kB | Adobe PDF | Открыть |
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