Skip navigation
DSpace logo
  1. Репозиторий БГУИР

Browsing by Author Borisenko, V. E.

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
А Б В Г Д Е Ж З И Й К Л М Н О П Р С Т У Ф Х Ц Ч Ш Щ Ъ Ы Ь Э Ю Я
 
Showing results 3 to 22 of 65 < previous   next >
Issue DateTitleAuthor(s)
2017Band gap calculation of bulk and monolayer transition metal dichalcogenides with new GVJ-2E approach within DFT frameworkGusakova, J.; Tay, B. K.; Wang, X.; Shiau, L. L.; Gusakov, V. E.; Borisenko, V. E.
2015Band gap modifications of two-dimensional defected MoS2Borisenko, V. E.; Krivosheeva, A. V.; Shaposhnikov, V. L.; Lazzari, J. L.; Skorodumova, N. V.; Tay, B. K.
2018Black ZnO/C nanocomposite photocatalytic films formed by one-step sol–gel techniqueDenisov, N. M.; Chubenko, E. B.; Bondarenko, V. P.; Borisenko, V. E.
2021Broad band photoluminescence of g-C3N4/ZnO/ZnS composite towards white light sourceChubenko, E. B.; Baglov, A. V.; Leanenia, M. S.; Urmanov, B. D.; Borisenko, V. E.
2019C-V characterization and electric parameters of ZrO2 received by UV stimulated plasma anodizingKushitashvili, Z.; Bibilashvili, A.; Borisenko, V. E.
2017Calculation of phonon spectra of two-dimensional crystals of molybdenum disulfide and ditellurideAlexeev, A. Yu.; Krivosheeva, A. V.; Shaposhnikov, V. L.; Borisenko, V. E.
2019Charge properties of a MOS transistor structure with a channel made of a two-dimensional crystalMakovskaya, T. I.; Danilyuk, A. L.; Krivosheeva, A. V.; Shaposhnikov, V. L.; Borisenko, V. E.
2020Charge Properties of the MOS Transistor Structure with the Channel Made from a Two-Dimensional CrystalMakovskaya, T. I.; Danilyuk, A. L.; Krivosheeva, A. V.; Shaposhnikov, V. L.; Borisenko, V. E.
2022Chemical vapor deposition of 2D crystallized g‑C3N4 layered filmsChubenko, E. B.; Kovalchuk, N. G.; Komissarov, I. V.; Borisenko, V. E.
2019Conductive CaSi2 transparent in the near infra-red rangeGalkin, N. G.; Dotsenko, S. A.; Galkin, K. N.; Maslov, A. M.; Cora, I.; Pecz, B.; Goroshko, D. L.; Tupkalo, A. V.; Chusovitin, E. A.; Subbotin, E. Y.; Migas, D. B.; Bogorodz, V. O.; Filonov, A. B.; Borisenko, V. E.
2021Curvature-induced effects in semiconducting alkaline-earth metal silicide nanotubesAlekseev, A. Yu.; Migas, D. B.; Filonov, A. B.; Chernykh, A. G.; Borisenko, V. E.; Skorodumova, N. V.
2020Effect of polaron formation on electronic, charge and magnetic properties of Nb12O29Migas, D. B.; Filonov, A. B.; Borisenko, V. E.; Skorodumova, N. V.
2017Effect of pressure on electronic and optical properties of magnesium silicide and germanideShaposhnikov, V. L.; Krivosheeva, A. V.; Borisenko, V. E.
2019Effects of lattice parameter manipulations on electronic and optical properties of BaSi2Shohonov, D. A.; Migas, D. B.; Filonov, A. B.; Borisenko, V. E.; Takabe, R.; Suemasu, T.
2014Electronic and dynamical properties of bulk and layered MoS2Krivosheeva, A. V.; Shaposhnikov, V. L.; Borisenko, V. E.; Lazzari, J. L.
2017Electronic Properties of Bulk and Monolayer TMDs: Theoretical Study Within DFT Framework (GVJ-2e Method)Gusakova, J.; Wang, X.; Shiau, L. L.; Krivosheeva, A. V.; Shaposhnikov, V. L.; Borisenko, V. E.; Gusakov, V. E.; Tay, B. K.
2017Electronic properties of bulk and monolayer TMDs: theoretical study within DFT framework GVJ-2e methodGusakova, J.; Wang, X.; Shiau, L. L.; Krivosheeva, A. V.; Shaposhnikov, V. L.; Borisenko, V. E.; Gusakov, V. E.; Tay, B. K.
2015Electronic properties of semiconducting Ca2Si silicide: From bulk to nanostructures by means of first principles calculationsBorisenko, V. E.; Migas, D. B.; Bogorodz, V. O.; Filonov, A. B.; Shaposhnikov, V. L.; Galkin, N. G.
2017Electronic properties of thin BaSi2 films with different orientationsMigas, D. B.; Bogorodz, V. O.; Krivosheeva, A. V.; Shaposhnikov, V. L.; Filonov, A. B.; Borisenko, V. E.
2019Electronic properties of WS2/WSe2 heterostructure containing Te impurity: the role of substituting positionKrivosheeva, A. V.; Shaposhnikov, V. L.; Borisenko, V. E.; Lazzari, J. L.
Showing results 3 to 22 of 65 < previous   next >