Depth Measurement of Nanoscale Damage to the Surface of Silicon Wafers in the Production of Submicron Integrated Microcircuits by Auger Spectroscopy Method

Abstract

The proposed method of depth control of the damaged layer of the polished wafers, based on application of Auger spectroscopy with the precision sputtering of the surface silicon layers and registration of the Auger electrons yield intensity from the wafer surface. The method makes it possible to perform the efficient depth control of the damaged layer and thus ensures the reliable control under the production conditions. The depth measurement range of the damaged layer constitutes 0,001–1 um. Resolution by depth is 1 nm.