Skip navigation
Home
Browse
Browse Items by:
Issue Date
Author
Title
Subject
Communities & Collections
Lang
русский
English
Log in:
My DSpace
Receive email
updates
Edit Profile
Репозиторий БГУИР
Browsing by Title
Jump to:
0-9
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
А
Б
В
Г
Д
Е
Ж
З
И
Й
К
Л
М
Н
О
П
Р
С
Т
У
Ф
Х
Ц
Ч
Ш
Щ
Ъ
Ы
Ь
Э
Ю
Я
or enter first few letters:
Sort by:
title
issue date
submit date
In order:
Ascending
Descending
Results/Page
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
Authors/Record:
All
1
5
10
15
20
25
30
35
40
45
50
Showing results 1042 to 1061 of 39867
< previous
next >
Issue Date
Title
Author(s)
2019
Electron beam nitriding of titanium in medium vacuum
Burdovitsin, V. A.
;
Golosov, D. A.
;
Oks, E. M.
;
Tyunkov, A. V.
;
Yushkov, Yu. G.
;
Zolotukhin, D. B.
;
Zavadski, S
2019
Electron tunneling to the surface states at photocatalysis
Sidorova, T. N.
;
Danilyuk, A. L.
2017
Electron tunneling to the surface states at photocatalysis
Sidorova, T.
;
Danilyuk, A. L.
2014
Electronic and dynamical properties of bulk and layered MoS2
Krivosheeva, A. V.
;
Shaposhnikov, V. L.
;
Borisenko, V. E.
;
Lazzari, J. L.
2023
Electronic and magnetic properties of doped 2D MoS2 /Ph systems
Krivosheeva, A. V.
;
Shaposhnikov, V. L.
2018
Electronic and optic properties of transition metal dichalcogenides (MoS2, WSe2) and graphene heterostructures
Baranava, M. S.
;
Hvazdouski, D. C.
;
Stempitsky, V. R.
;
Volchek, S. A.
;
Najbuk, M.
2022
Electronic finance in China: infrastructure development
Fei Yan
2020
Electronic methodological complex on the Discipline «Applied Mathematics» in English for international students
Malysheva, O. N.
2017
Electronic Properties of Bulk and Monolayer TMDs: Theoretical Study Within DFT Framework (GVJ-2e Method)
Gusakova, J.
;
Wang, X.
;
Shiau, L. L.
;
Krivosheeva, A. V.
;
Shaposhnikov, V. L.
;
Borisenko, V. E.
;
Gusakov, V. E.
;
Tay, B. K.
2017
Electronic properties of bulk and monolayer TMDs: theoretical study within DFT framework GVJ-2e method
Gusakova, J.
;
Wang, X.
;
Shiau, L. L.
;
Krivosheeva, A. V.
;
Shaposhnikov, V. L.
;
Borisenko, V. E.
;
Gusakov, V. E.
;
Tay, B. K.
2017
Electronic properties of graphene-based heterostructures
Skachkova, V. A.
;
Baranava, M. S.
;
Hvazdouski, D. C.
;
Stempitsky, V. R.
2017
Electronic properties of graphene-based heterostructures
Skachkova, V. A.
;
Baranava, M. S.
;
Hvazdouski, D. C.
;
Stempitsky, V. R.
2017
Electronic properties of phosphorene with vacancies: ab initio study
Skachkova, V.
2017
Electronic properties of phosphorene with vacancies: ab initio study
Skachkova, V.
2013
Electronic properties of quasi-two-dimensional molybdenum disulfide with cobalt impurities
Kozlova, O.
;
Nelayev, V.
2015
Electronic properties of semiconducting Ca2Si silicide: From bulk to nanostructures by means of first principles calculations
Borisenko, V. E.
;
Migas, D. B.
;
Bogorodz, V. O.
;
Filonov, A. B.
;
Shaposhnikov, V. L.
;
Galkin, N. G.
2017
Electronic properties of thin BaSi2 films with different orientations
Migas, D. B.
;
Bogorodz, V. O.
;
Krivosheeva, A. V.
;
Shaposhnikov, V. L.
;
Filonov, A. B.
;
Borisenko, V. E.
2019
Electronic properties of WS2/WSe2 heterostructure containing Te impurity: the role of substituting position
Krivosheeva, A. V.
;
Shaposhnikov, V. L.
;
Borisenko, V. E.
;
Lazzari, J. L.
2023
Electronic scientific and methodological journal “Informatics Pedagogy” for teachers in conditions of informatization of education
Kazachenok, V.
;
Vasilevsky, K.
2022
Electronic structure and optical properties of Ca2Si films grown on silicon different oriented substrates and calculated from first principles
Galkin, K. N.
;
Kropachev, O. V.
;
Maslov, A. M.
;
Chernev, I. M.
;
Subbotin, E. Yu.
;
Galkin, N. G.
;
Alekseev, A. Yu.
;
Migas, D. B.