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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/10856
Title: A model of radiative recombination in n-type porous silicon-aluminum Schottky junction
Authors: Balucani, M.
Bondarenko, V.
Franchina, L.
Lamedica, G.
Yakovtseva, V. A.
Ferrari, A.
Keywords: публикации ученых
Schottky barriers
P-N junctions
Silicon
Luminescence
Light emitting diodes
Issue Date: 1999
Publisher: American Institute of Physics; USA
Citation: A model of radiative recombination in n-type porous silicon-aluminum Schottky junction / M. Balucani and others // Applied Physics Letters. - 1999. - Vol. 74. - Issue 14 . - P. 1960. - DOI: http://dx.doi.org/10.1063/1.123741
Abstract: It is common knowledge that silicon emits visible light in its breakdown condition, but it is also known to have low efficiency. In this letter, we report an in-depth analysis of data for light emitting devices based on porous silicon.
URI: http://libeldoc.bsuir.by/handle/123456789/10856
https://libeldoc.bsuir.by/handle/123456789/10856
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