https://libeldoc.bsuir.by/handle/123456789/29053| Title: | Electrophysical properties of transition metals chalcogenides structures used as structural elements of the nanoelectronics devices |
| Authors: | Baranava, M. S. Najbuk, M. Hvazdouski, D. C. Stempitsky, V. R. |
| Keywords: | материалы конференций;electrophysical properties;metals chalcogenides structures |
| Issue Date: | 2017 |
| Publisher: | БГУИР |
| Citation: | Electrophysical properties of transition metals chalcogenides structures used as structural elements of the nanoelectronics devices / M. Baranava and others // Nano-design, technology, computer simulations : proceedings of 17th International workshop on new approaches to high –tech (26-27 October, 2017). – Minsk : BSUIR, 2017. – С. 191 - 192. |
| URI: | https://libeldoc.bsuir.by/handle/123456789/29053 |
| Appears in Collections: | NDTCS 2017 |
| File | Description | Size | Format | |
|---|---|---|---|---|
| Baranava_Electrophysical.PDF | 396.65 kB | Adobe PDF | View/Open |
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