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NDTCS 2017 : [70] Главная страница коллекции Просмотр статистики

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Ресурсы коллекции (Сортировка по Даты сохранения в по убыванию порядке): 1 по 20 из 70
Дата выпускаНазваниеАвтор(ы)
2017Gate leakage current in AlGaN Schottky diode in terms of phonon-assisted tunneling modelVolcheck, V.
2017Emission properties of an array of silicon nanoconesTrafimenko, A.; Danilyuk, A.
2017Electronic properties of phosphorene with vacancies: ab initio studySkachkova, V.
2017Electron tunneling to the surface states at photocatalysisSidorova, T.; Danilyuk, A.
2017Study of the thermal stability of anodic alumina films on aluminumShulgov, V.
2017RF mems modulator simulationShukevich, Y.; Douhaya, Y.
2017Effects of grain size on the charge carrier mobility of BaSi2 polycrystaline thin filmShohonov, D.; Samusevich, I.; Filonov, A.; Migas, D.
2017Breakdown and conductivity switching in nanosized hafnium dioxidePodryabinkin, D.; Danilyuk, A.
2017Simulation of the optical waves interaction with nanostructure thin aluminum-nickel filmsPechen, T.; Prudnik, A. M.; Прудник, А. М.
2017Analysis and digital processing of sem images of anodic alumina films with nanoporous structureLushpa, N.; Dinh, T.
2017Ab initio simulation of graphene interaction with SiO2 substrate for nanoelectronics applicationHvazdouski, D.; Stempitsky, V.
2017Surface plasmons in graphene heterostructureFelsheruk, A.; Danilyuk, A.
2017Optimization of structural and technological parameters of junction field-effect transistor with increased radiation hardnessDvornikov, O.; Lovshenko, I.; Stempitsky, V.; Khanko, V.
2017Investigation of the radiations effect on the electrical characteristics of a junction field-effect transistorDvornikov, O.; Lovshenko, I.; Stempitsky, V.; Khanko, V.
2017Approaches to implementation of the ion-sensitive field-effect transistor compact modelsDao Dinh Ha
2017Calculating and modeling of integrated displacement systems for precision equipment of micro- and nanoelectronicsDainiak, I.; Kuznetsov, V.; Karpovich, S.
2017Parallel computing environment for digital devices simulation and VLSI topology verificationBelous, A.; Solodukha, V.; Shvedov, S.; Borovik, A.; Kostrov, A.; Stempitsky, V.
2017Exchange interaction in zinc oxide doped by cobaltBaranava, M.; Danilyuk, A.; Stempitsky, V.
2017Electrophysical properties of transition metals chalcogenides structures used as structural elements of the nanoelectronics devicesBaranava, M.; Najbuk, M.; Hvazdouski, D.; Stempitsky, V.
2017Peculiarities of magnetoresistance of the spin valve with an antiferromagnetic layerBaiman, G. B.; Bogutsky, A.; Danilyuk, A.
Ресурсы коллекции (Сортировка по Даты сохранения в по убыванию порядке): 1 по 20 из 70