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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/29062
Title: Optimization of structural and technological parameters of junction field-effect transistor with increased radiation hardness
Authors: Dvornikov, O.
Lovshenko, I.
Stempitsky, V.
Khanko, V.
Keywords: материалы конференций
junction field-effect transistor
increased radiation hardness
Issue Date: 2017
Publisher: БГУИР
Citation: Optimization of structural and technological parameters of junction field-effect transistor with increased radiation hardness / O. Dvornikov and others // Nano-design, technology, computer simulations : proceedings of 17th International workshop on new approaches to high –tech (26-27 October, 2017). – Minsk : BSUIR, 2017. – С. 150 - 155.
URI: https://libeldoc.bsuir.by/handle/123456789/29062
Appears in Collections:NDTCS 2017

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