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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/29062
Title: Optimization of structural and technological parameters of junction field-effect transistor with increased radiation hardness
Authors: Dvornikov, O. V.
Lovshenko, I.
Stempitsky, V.
Khanko, V. T.
Keywords: материалы конференций;junction field-effect transistor;increased radiation hardness
Issue Date: 2017
Publisher: БГУИР
Citation: Optimization of structural and technological parameters of junction field-effect transistor with increased radiation hardness / O. Dvornikov [et al.] // Nano-design, technology, computer simulations : proceedings of 17th International workshop on new approaches to high –tech, Minsk, 26–27 October, 2017 / Belarusian State University of Informatics and Radioelectronics. – Minsk, 2017. – Р. 150–155.
URI: https://libeldoc.bsuir.by/handle/123456789/29062
Appears in Collections:NDTCS 2017

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