https://libeldoc.bsuir.by/handle/123456789/29062| Title: | Optimization of structural and technological parameters of junction field-effect transistor with increased radiation hardness |
| Authors: | Dvornikov, O. V. Lovshenko, I. Stempitsky, V. Khanko, V. T. |
| Keywords: | материалы конференций;junction field-effect transistor;increased radiation hardness |
| Issue Date: | 2017 |
| Publisher: | БГУИР |
| Citation: | Optimization of structural and technological parameters of junction field-effect transistor with increased radiation hardness / O. Dvornikov and others // Nano-design, technology, computer simulations : proceedings of 17th International workshop on new approaches to high –tech (26-27 October, 2017). – Minsk : BSUIR, 2017. – С. 150 - 155. |
| URI: | https://libeldoc.bsuir.by/handle/123456789/29062 |
| Appears in Collections: | NDTCS 2017 |
| File | Description | Size | Format | |
|---|---|---|---|---|
| Dvornikov_Optimization.PDF | 316.83 kB | Adobe PDF | View/Open |
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