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NDTCS 2017 : [70] Collection home page

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Collection's Items (Sorted by Submit Date in Descending order): 1 to 20 of 70
Issue DateTitleAuthor(s)
2017Gate leakage current in AlGaN Schottky diode in terms of phonon-assisted tunneling modelVolcheck, V.
2017Emission properties of an array of silicon nanoconesTrafimenko, A.; Danilyuk, A. L.
2017Electronic properties of phosphorene with vacancies: ab initio studySkachkova, V.
2017Electron tunneling to the surface states at photocatalysisSidorova, T.; Danilyuk, A. L.
2017Study of the thermal stability of anodic alumina films on aluminumShulgov, V. V.
2017RF mems modulator simulationShukevich, Y.; Douhaya, Y.
2017Effects of grain size on the charge carrier mobility of BaSi2 polycrystaline thin filmShohonov, D.; Samusevich, I.; Filonov, A. B.; Migas, D. B.
2017Breakdown and conductivity switching in nanosized hafnium dioxidePodryabinkin, D.; Danilyuk, A. L.
2017Simulation of the optical waves interaction with nanostructure thin aluminum-nickel filmsPechen, T.; Prudnik, A. M.
2017Analysis and digital processing of sem images of anodic alumina films with nanoporous structureLushpa, N.; Dinh, T.
2017Ab initio simulation of graphene interaction with SiO2 substrate for nanoelectronics applicationHvazdouski, D. C.; Stempitsky, V.
2017Surface plasmons in graphene heterostructureFelsharuk, A. V.; Danilyuk, A. L.
2017Optimization of structural and technological parameters of junction field-effect transistor with increased radiation hardnessDvornikov, O. V.; Lovshenko, I.; Stempitsky, V.; Khanko, V. T.
2017Investigation of the radiations effect on the electrical characteristics of a junction field-effect transistorDvornikov, O. V.; Lovshenko, I.; Stempitsky, V.; Khanko, V. T.
2017Approaches to implementation of the ion-sensitive field-effect transistor compact modelsDao Dinh Ha
2017Calculating and modeling of integrated displacement systems for precision equipment of micro- and nanoelectronicsDainiak, I. V.; Kuznetsov, V.; Karpovich, S. E.
2017Parallel computing environment for digital devices simulation and VLSI topology verificationBelous, A. I.; Solodukha, V.; Shvedov, S.; Borovik, A. M.; Kostrov, A. I.; Stempitsky, V. R.
2017Exchange interaction in zinc oxide doped by cobaltBaranava, M. S.; Danilyuk, A. L.; Stempitsky, V. R.
2017Electrophysical properties of transition metals chalcogenides structures used as structural elements of the nanoelectronics devicesBaranava, M. S.; Najbuk, M.; Hvazdouski, D. C.; Stempitsky, V. R.
2017Peculiarities of magnetoresistance of the spin valve with an antiferromagnetic layerBaiman, G. B.; Bogutsky, A.; Danilyuk, A. L.
Collection's Items (Sorted by Submit Date in Descending order): 1 to 20 of 70