https://libeldoc.bsuir.by/handle/123456789/29081| Title: | Gate leakage current in AlGaN Schottky diode in terms of phonon-assisted tunneling model |
| Authors: | Volcheck, V. |
| Keywords: | материалы конференций;gate leakage current;Schottky diode;phonon-assisted tunneling model |
| Issue Date: | 2017 |
| Publisher: | БГУИР |
| Citation: | Volcheck, V. Gate leakage current in AlGaN Schottky diode in terms of phonon-assisted tunneling model / V. Volcheck // Nano-design, technology, computer simulations : proceedings of 17th International workshop on new approaches to high –tech, Minsk, 26–27 October, 2017 / Belarusian State University of Informatics and Radioelectronics. – Minsk, 2017. – Р. 178–180. |
| URI: | https://libeldoc.bsuir.by/handle/123456789/29081 |
| Appears in Collections: | NDTCS 2017 |
| File | Description | Size | Format | |
|---|---|---|---|---|
| Volcheck_Gate.PDF | 346 kB | Adobe PDF | View/Open |
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