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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/31076
Title: Period multiplication and chaotic dynamics in a semiconductor with the Gunn instability
Authors: Shalatonin, V.
Mishchenko, V.
Keywords: доклады БГУИР
nonlinear dynamics
arsenid gallium
strange attractor
chaotic oscillations
Gunn- effect model
Issue Date: 2003
Publisher: БГУИР
Citation: Shalatonin, V. Period multiplication and chaotic dynamics in a semiconductor with the Gunn instabilit / V. Shalatonin, V. Mishchenko // Доклады БГУИР. - 2003. - № 4. - С. 59 - 62.
Abstract: На основе дрейф-диффузионной модели разработана программа расчета процессов переноса и нелинейной динамики колебаний в GaAs полупроводниках с эффектом Ганна. Показано, что нелинейное взаимодействие характеризуется умножением периода колебаний и возникновением странных хаотических аттракторов.A drift-diffusion Gunn effect model is used to analyse complex behaviour of the natural and driven Gunn oscillations. The results of the numerical simulation are presented. It was shown that Gunn devices might exhibit quite complicated nonlinear dynamics, such as period multiplication and strange chaotic attractors.
URI: https://libeldoc.bsuir.by/handle/123456789/31076
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