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Title: Screening design and device/technology deep- submicron MOSFET simulation
Authors: Borovik, A.
Trung Tran Tuan
Stempitsky, V.
Keywords: материалы конференций
deep- submicron
Issue Date: 2013
Publisher: БГУИР
Citation: Borovik, A. Screening design and device/technology deep- submicron MOSFET simulation / A. Borovik, Trung Tran Tuan, V. Stempitsky // Nano-Design, Technology, Computer Simulation — NDTCS ’ 2013: proceedings of the 15th International Workshop on New Approaches to High-Tech, Minsk, June 11–15, 2013 / BSUIR. - Minsk, 2013. - P. 85 – 87.
Abstract: The problem concerned to the verification of the significant parameters of the compact deep- submicron MOS-FET model was investigated in the presented work. The screening experiments methodology is used for the extraction of the significant parameters from the entire set of the model parameters.
Appears in Collections:NDTCS 2013

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