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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/33065
Title: Screening design and device/technology deep- submicron MOSFET simulation
Authors: Borovik, A.
Trung Tran Tuan
Stempitsky, V.
Keywords: материалы конференций
deep- submicron
MOS-FET
Issue Date: 2013
Publisher: БГУИР
Citation: Borovik, A. Screening design and device/technology deep- submicron MOSFET simulation / A. Borovik, Trung Tran Tuan, V. Stempitsky // Nano-Design, Technology, Computer Simulation — NDTCS ’ 2013: proceedings of the 15th International Workshop on New Approaches to High-Tech, Minsk, June 11–15, 2013 / BSUIR. - Minsk, 2013. - P. 85 – 87.
Abstract: The problem concerned to the verification of the significant parameters of the compact deep- submicron MOS-FET model was investigated in the presented work. The screening experiments methodology is used for the extraction of the significant parameters from the entire set of the model parameters.
URI: https://libeldoc.bsuir.by/handle/123456789/33065
Appears in Collections:NDTCS 2013

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