https://libeldoc.bsuir.by/handle/123456789/33065| Title: | Screening design and device/technology deep- submicron MOSFET simulation |
| Authors: | Borovik, A. M. Trung Tran Tuan Stempitsky, V. R. |
| Keywords: | материалы конференций;deep- submicron;MOS-FET |
| Issue Date: | 2013 |
| Publisher: | БГУИР |
| Citation: | Borovik, A. Screening design and device/technology deep- submicron MOSFET simulation / A. Borovik, Trung Tran Tuan, V. Stempitsky // Nano-Design, Technology, Computer Simulation — NDTCS ’ 2013: proceedings of the 15th International Workshop on New Approaches to High-Tech, Minsk, June 11–15, 2013 / BSUIR. - Minsk, 2013. - P. 85 – 87. |
| Abstract: | The problem concerned to the verification of the significant parameters of the compact deep- submicron MOS-FET model was investigated in the presented work. The screening experiments methodology is used for the extraction of the significant parameters from the entire set of the model parameters. |
| URI: | https://libeldoc.bsuir.by/handle/123456789/33065 |
| Appears in Collections: | NDTCS 2013 |
| File | Description | Size | Format | |
|---|---|---|---|---|
| Borovik_Screening.pdf | 97.82 kB | Adobe PDF | View/Open |
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