| DC Field | Value | Language |
|---|
| dc.contributor.author | Borovik, A. M. | - |
| dc.contributor.author | Trung Tran Tuan | - |
| dc.contributor.author | Stempitsky, V. R. | - |
| dc.date.accessioned | 2018-10-01T06:45:29Z | - |
| dc.date.available | 2018-10-01T06:45:29Z | - |
| dc.date.issued | 2013 | - |
| dc.identifier.citation | Borovik, A. Screening design and device/technology deep- submicron MOSFET simulation / A. Borovik, Trung Tran Tuan, V. Stempitsky // Nano-Design, Technology, Computer Simulation — NDTCS ’ 2013: proceedings of the 15th International Workshop on New Approaches to High-Tech, Minsk, June 11–15, 2013 / BSUIR. - Minsk, 2013. - P. 85 – 87. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/33065 | - |
| dc.description.abstract | The problem concerned to the verification of the significant parameters of the compact deep-
submicron MOS-FET model was investigated in the presented work. The screening experiments
methodology is used for the extraction of the significant parameters from the entire set of the model
parameters. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | БГУИР | ru_RU |
| dc.subject | материалы конференций | ru_RU |
| dc.subject | deep- submicron | ru_RU |
| dc.subject | MOS-FET | ru_RU |
| dc.title | Screening design and device/technology deep- submicron MOSFET simulation | ru_RU |
| dc.type | Статья | ru_RU |
| Appears in Collections: | NDTCS 2013
|
