https://libeldoc.bsuir.by/handle/123456789/38542| Title: | Simulation of the Heavy Charged Particle Impacts on Electrical Characteristics of N-MOSFET Device Structure |
| Authors: | Dao Dinh Ha Tran Tuan Trung Nguyen Trong Quang Lovshenko, I. Khanko, V. T. Stempitsky, V. |
| Keywords: | публикации ученых;MOSFET;device simulation;ionizing radiation;single event upset;linear energy transfer |
| Issue Date: | 2019 |
| Publisher: | Institute of Electrical and Electronics Engineers (IEEE) |
| Citation: | Simulation of the Heavy Charged Particle Impacts on Electrical Characteristics of N-MOSFET Device Structure / Dao Dinh Ha [and others] // International Conference on Advanced Technologies for Communications (ATC-2019): 12 th, The International Conference on Advanced Technologies for Communications, Hanoi, Vietnam, Oct. 17-19, 2019 / Institute of Electrical and Electronics Engineers (IEEE). – Hanoi, 2019. – P. 189 – 192. – DOI: https://doi.org/10.1109/ATC.2019.8924508. |
| Abstract: | The paper presents the results of simulation of the impacts of a heavy charged particle with a value of linear energy transfer equal to 1.81 MeV•cm2 /mg, 10.1 MeV•cm2 /mg, 18.8 MeV•cm2 /mg, 55.0 MeV•cm2 /mg, corresponding to nitrogen ions 15N+4 with energy E = 1.87 MeV, argon 40Ar+12 with energy E = 372 MeV, ferrum 56Fe+15 with energy E = 523 MeV, xenon 131Xe+35 with energy E = 1217 MeV, on electrical characteristics of n-MOSFET device structure when there are variations in the motion trajectory and ambient temperature. |
| URI: | https://libeldoc.bsuir.by/handle/123456789/38542 |
| Appears in Collections: | Публикации в зарубежных изданиях |
| File | Description | Size | Format | |
|---|---|---|---|---|
| Dao_Simulation.pdf | 1.18 MB | Adobe PDF | View/Open |
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