|Title:||Simulation of the Heavy Charged Particle Impacts on Electrical Characteristics of N-MOSFET Device Structure|
|Authors:||Dao Dinh Ha|
Tran Tuan Trung
Nguyen Trong Quang
Khanko, V. T.
|Keywords:||публикации ученых;MOSFET;device simulation;ionizing radiation;single event upset;linear energy transfer|
|Publisher:||Institute of Electrical and Electronics Engineers (IEEE), United States|
|Citation:||Simulation of the Heavy Charged Particle Impacts on Electrical Characteristics of N-MOSFET Device Structure / Dao Dinh Ha [and others] // International Conference on Advanced Technologies for Communications (ATC-2019): 12 th, The International Conference on Advanced Technologies for Communications, Hanoi, Vietnam, Oct. 17-19, 2019 / Institute of Electrical and Electronics Engineers (IEEE). – Hanoi, 2019. – P. 189 – 192. – DOI: https://doi.org/10.1109/ATC.2019.8924508.|
|Abstract:||The paper presents the results of simulation of the impacts of a heavy charged particle with a value of linear energy transfer equal to 1.81 MeV•cm2 /mg, 10.1 MeV•cm2 /mg, 18.8 MeV•cm2 /mg, 55.0 MeV•cm2 /mg, corresponding to nitrogen ions 15N+4 with energy E = 1.87 MeV, argon 40Ar+12 with energy E = 372 MeV, ferrum 56Fe+15 with energy E = 523 MeV, xenon 131Xe+35 with energy E = 1217 MeV, on electrical characteristics of n-MOSFET device structure when there are variations in the motion trajectory and ambient temperature.|
|Appears in Collections:||Публикации в зарубежных изданиях|
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