| DC Field | Value | Language |
|---|
| dc.contributor.author | Dao Dinh Ha | - |
| dc.contributor.author | Tran Tuan Trung | - |
| dc.contributor.author | Nguyen Trong Quang | - |
| dc.contributor.author | Lovshenko, I. | - |
| dc.contributor.author | Khanko, V. T. | - |
| dc.contributor.author | Stempitsky, V. | - |
| dc.date.accessioned | 2020-02-12T12:36:30Z | - |
| dc.date.available | 2020-02-12T12:36:30Z | - |
| dc.date.issued | 2019 | - |
| dc.identifier.citation | Simulation of the Heavy Charged Particle Impacts on Electrical Characteristics of N-MOSFET Device Structure / Dao Dinh Ha [and others] // International Conference on Advanced Technologies for Communications (ATC-2019): 12 th, The International Conference on Advanced Technologies for Communications, Hanoi, Vietnam, Oct. 17-19, 2019 / Institute of Electrical and Electronics Engineers (IEEE). – Hanoi, 2019. – P. 189 – 192. – DOI: https://doi.org/10.1109/ATC.2019.8924508. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/38542 | - |
| dc.description.abstract | The paper presents the results of simulation of the impacts of a heavy charged particle with a value of linear energy transfer equal to 1.81 MeV•cm2 /mg, 10.1 MeV•cm2 /mg, 18.8 MeV•cm2 /mg, 55.0 MeV•cm2 /mg, corresponding to nitrogen ions 15N+4 with energy E = 1.87 MeV, argon 40Ar+12 with energy E = 372 MeV, ferrum 56Fe+15 with energy E = 523 MeV, xenon 131Xe+35 with energy E = 1217 MeV, on electrical characteristics of n-MOSFET device structure when there are variations in the motion trajectory and ambient temperature. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) | ru_RU |
| dc.subject | публикации ученых | ru_RU |
| dc.subject | MOSFET | ru_RU |
| dc.subject | device simulation | ru_RU |
| dc.subject | ionizing radiation | ru_RU |
| dc.subject | single event upset | ru_RU |
| dc.subject | linear energy transfer | ru_RU |
| dc.title | Simulation of the Heavy Charged Particle Impacts on Electrical Characteristics of N-MOSFET Device Structure | ru_RU |
| dc.type | Статья | ru_RU |
| Appears in Collections: | Публикации в зарубежных изданиях
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