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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/38542
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dc.contributor.authorDao Dinh Ha-
dc.contributor.authorTran Tuan Trung-
dc.contributor.authorNguyen Trong Quang-
dc.contributor.authorLovshenko, I.-
dc.contributor.authorKhanko, V. T.-
dc.contributor.authorStempitsky, V.-
dc.date.accessioned2020-02-12T12:36:30Z-
dc.date.available2020-02-12T12:36:30Z-
dc.date.issued2019-
dc.identifier.citationSimulation of the Heavy Charged Particle Impacts on Electrical Characteristics of N-MOSFET Device Structure / Dao Dinh Ha [and others] // International Conference on Advanced Technologies for Communications (ATC-2019): 12 th, The International Conference on Advanced Technologies for Communications, Hanoi, Vietnam, Oct. 17-19, 2019 / Institute of Electrical and Electronics Engineers (IEEE). – Hanoi, 2019. – P. 189 – 192. – DOI: https://doi.org/10.1109/ATC.2019.8924508.ru_RU
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/38542-
dc.description.abstractThe paper presents the results of simulation of the impacts of a heavy charged particle with a value of linear energy transfer equal to 1.81 MeV•cm2 /mg, 10.1 MeV•cm2 /mg, 18.8 MeV•cm2 /mg, 55.0 MeV•cm2 /mg, corresponding to nitrogen ions 15N+4 with energy E = 1.87 MeV, argon 40Ar+12 with energy E = 372 MeV, ferrum 56Fe+15 with energy E = 523 MeV, xenon 131Xe+35 with energy E = 1217 MeV, on electrical characteristics of n-MOSFET device structure when there are variations in the motion trajectory and ambient temperature.ru_RU
dc.language.isoenru_RU
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)ru_RU
dc.subjectпубликации ученыхru_RU
dc.subjectMOSFETru_RU
dc.subjectdevice simulationru_RU
dc.subjectionizing radiationru_RU
dc.subjectsingle event upsetru_RU
dc.subjectlinear energy transferru_RU
dc.titleSimulation of the Heavy Charged Particle Impacts on Electrical Characteristics of N-MOSFET Device Structureru_RU
dc.typeСтатьяru_RU
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