https://libeldoc.bsuir.by/handle/123456789/46448| Title: | A stable FHD display device based on BCE IGZO TFTs |
| Authors: | Wan, G. Ge, S. Li, S. Gong, C. Lin, X. |
| Keywords: | материалы конференций;thin film transistors;chemical precipitation |
| Issue Date: | 2019 |
| Publisher: | БГУИР |
| Citation: | A stable FHD display device based on BCE IGZO TFTs / G. Wan [et al.] // Eurodisplay 2019 : Book of abstracts of International Conference, Minsk, September 16-20, 2019 / Society for Information Display, Belarusian State University of Informatics and Radioelectronics ; ed.: V. A. Bogush [et al.]. – Minsk, 2019. – P. 85–86. |
| Abstract: | In this work, the impact of the deposition process of the SiOx passivation layer on the electrical properties of the BCE IGZO TFTs has been studied. The AVth of the TFTs are 2.52 and -1.67 V under PBTS (60°C, 30 V) and NBITS (60°C, -30 V, 4500nit) after 1 hour, respectively. The stability of these TFTs is verified in 32in FHD display devices, which still could display the picture properly after the 500-hour aging test at 60°C and 90% humidity. A stable FHD display device based on BCE IGZO TFTs was achieved. |
| URI: | https://libeldoc.bsuir.by/handle/123456789/46448 |
| Appears in Collections: | EuroDisplay 2019 |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.