Influence of Si conductivity type on immersion deposition of Cu films on porous Si

Abstract

An immersion deposition of copper (Cu) on a porous silicon (PS) from an aqueous solution of the copper sulfate (CuSO4) and hydrofluoric acid (HF) has been performed. The PS based on n+- and p+-silicon (Si) wafers has been used to study the Cu deposition depending on the conductivity type of the initial Si substrate. The PS/n+-Si substrate has been found to allow the deposition of the nanostructured Cu films on the PS, while the PS/p+-Si has been shown to provide the formation of the porous Cu films by the complete substitution of the Si atoms in the PS with the Cu atoms.