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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/6732
Title: Influence of Si conductivity type on immersion deposition of Cu films on porous Si
Authors: Dolgiy, A. L.
Bandarenka, H. V.
Petrovich, V.
Keywords: публикации ученых
Issue Date: 2015
Citation: Dolgiy, A. L. Influence of Si conductivity type on immersion deposition of Cu films on porous Si / A. Dolgiy, H. Bandarenka, V. Petrovich // Physics, Chemistry and application of Nanostructures, 2015. - 5 р.
Abstract: An immersion deposition of copper (Cu) on a porous silicon (PS) from an aqueous solution of the copper sulfate (CuSO4) and hydrofluoric acid (HF) has been performed. The PS based on n+- and p+-silicon (Si) wafers has been used to study the Cu deposition depending on the conductivity type of the initial Si substrate. The PS/n+-Si substrate has been found to allow the deposition of the nanostructured Cu films on the PS, while the PS/p+-Si has been shown to provide the formation of the porous Cu films by the complete substitution of the Si atoms in the PS with the Cu atoms.
URI: https://libeldoc.bsuir.by/handle/123456789/6732
Appears in Collections:Публикации в зарубежных изданиях

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