| DC Field | Value | Language |
|---|
| dc.contributor.author | Dolgiy, A. L. | - |
| dc.contributor.author | Bandarenka, H. V. | - |
| dc.date.accessioned | 2016-05-12T12:13:43Z | - |
| dc.date.accessioned | 2017-07-27T12:15:10Z | - |
| dc.date.available | 2016-05-12T12:13:43Z | - |
| dc.date.available | 2017-07-27T12:15:10Z | - |
| dc.date.issued | 2015 | - |
| dc.identifier.citation | Dolgiy, A. L. Influence of Si conductivity type on immersion deposition of Cu films on porous Si / A. Dolgiy, H. Bandarenka // Physics, Chemistry and application of Nanostructures : Proceedings of International Conference Nanomeeting – 2015, Minsk, Belarus, 26–29 May 2015 / Edited: V. E. Borisenko [et al.]. – Minsk, 2015. – P. 280–283. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/6732 | - |
| dc.description.abstract | An immersion deposition of copper (Cu) on a porous silicon (PS) from an aqueous solution
of the copper sulfate (CuSO4) and hydrofluoric acid (HF) has been performed. The PS
based on n+- and p+-silicon (Si) wafers has been used to study the Cu deposition depending
on the conductivity type of the initial Si substrate. The PS/n+-Si substrate has been found
to allow the deposition of the nanostructured Cu films on the PS, while the PS/p+-Si has
been shown to provide the formation of the porous Cu films by the complete substitution
of the Si atoms in the PS with the Cu atoms. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.subject | публикации ученых | ru_RU |
| dc.title | Influence of Si conductivity type on immersion deposition of Cu films on porous Si | ru_RU |
| dc.type | Article | ru_RU |
| dc.identifier.DOI | https://doi.org/10.1142/9789814696524_0069 | - |
| Appears in Collections: | Публикации в зарубежных изданиях
|
