Issue Date | Title | Author(s) |
2013 | Charge Redistribution at GaAs | Yin, J.; Migas, D. B.; Panahandeh-Fard, M.; Chen, S.; Wang, Z.; Lova, P.; Soci, C. |
2017 | Electronic properties of graphene-based heterostructures | Skachkova, V. A.; Baranava, M. S.; Hvazdouski, D. C.; Stempitsky, V. R. |
2019 | Impact of Defects on Electronic Properties of Heterostructures Constructed From Monolayers of Transition Metal Dichalcogenides | Shaposhnikov, V. L.; Krivosheeva, A. V.; Borisenko, V. E.; Lazzari, J. L. |
2004 | Interface transparency of Nb/Pd layered systems | Prischepa, S. L.; Cirillo, C.; Salvato, M.; Attanasio, C. |
2004 | Nucleation of superconductivity in finite metallic multilayers: Effect of the symmetry | Prischepa, S. L.; Kushnir, V. N.; Cirillo, C.; Della Rocca, M. L.; Angrisani Armenio, A.; Maritato, L.; Salvato, M.; Attanasio, C. |
2017 | The study of contribution of thermionic and tunnel components in heterostructures with a single quantum well InGaAs/GaAs by admittance methods | Ivanova, Y.; Zubkov, V. |
2016 | Формирование и исследование матричных TiO2/Bi2O3 наноструктур | Захлебаева, А. И.; Горох, Г. Г.; Жилинский, В. В.; Богомазова, Н. В. |