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Showing results 1 to 7 of 7
Issue DateTitleAuthor(s)
2013Charge Redistribution at GaAsYin, J.; Migas, D. B.; Panahandeh-Fard, M.; Chen, S.; Wang, Z.; Lova, P.; Soci, C.
2017Electronic properties of graphene-based heterostructuresSkachkova, V. A.; Baranava, M. S.; Hvazdouski, D. C.; Stempitsky, V. R.
2019Impact of Defects on Electronic Properties of Heterostructures Constructed From Monolayers of Transition Metal DichalcogenidesShaposhnikov, V. L.; Krivosheeva, A. V.; Borisenko, V. E.; Lazzari, J. L.
2004Interface transparency of Nb/Pd layered systemsPrischepa, S. L.; Cirillo, C.; Salvato, M.; Attanasio, C.
2004Nucleation of superconductivity in finite metallic multilayers: Effect of the symmetryPrischepa, S. L.; Kushnir, V. N.; Cirillo, C.; Della Rocca, M. L.; Angrisani Armenio, A.; Maritato, L.; Salvato, M.; Attanasio, C.
2017The study of contribution of thermionic and tunnel components in heterostructures with a single quantum well InGaAs/GaAs by admittance methodsIvanova, Y.; Zubkov, V.
2016Формирование и исследование матричных TiO2/Bi2O3 наноструктурЗахлебаева, А. И.; Горох, Г. Г.; Жилинский, В. В.; Богомазова, Н. В.