Skip navigation

Browsing by Author Tay, B. K.

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
А Б В Г Д Е Ж З И Й К Л М Н О П Р С Т У Ф Х Ц Ч Ш Щ Ъ Ы Ь Э Ю Я
 
Showing results 1 to 5 of 5
Issue DateTitleAuthor(s)
2017Band gap calculation of bulk and monolayer transition metal dichalcogenides with new GVJ-2E approach within DFT frameworkGusakova, J.; Tay, B. K.; Wang, X.; Shiau, L. L.; Gusakov, V. E.; Borisenko, V. E.
2015Band gap modifications of two-dimensional defected MoS2Borisenko, V. E.; Krivosheeva, A. V.; Shaposhnikov, V. L.; Lazzari, J. L.; Skorodumova, N. V.; Tay, B. K.
2017Electronic Properties of Bulk and Monolayer TMDs: Theoretical Study Within DFT Framework (GVJ-2e Method)Gusakova, J.; Wang, X.; Shiau, L. L.; Krivosheeva, A. V.; Shaposhnikov, V. L.; Borisenko, V. E.; Gusakov, V. E.; Tay, B. K.
2017Electronic properties of bulk and monolayer TMDs: theoretical study within DFT framework GVJ-2e methodGusakova, J.; Wang, X.; Shiau, L. L.; Krivosheeva, A. V.; Shaposhnikov, V. L.; Borisenko, V. E.; Gusakov, V. E.; Tay, B. K.
2015Theoretical study of defect impact on two-dimensional MoS2Borisenko, V. E.; Krivosheeva, A. V.; Shaposhnikov, V. L.; Lazzari, J. L.; Waileong, C.; Gusakova, J.; Tay, B. K.