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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/10125
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dc.contributor.authorPrischepa, S. L.-
dc.contributor.authorBandarenka, H. V.-
dc.contributor.authorFittipaldi, R.-
dc.contributor.authorVecchione, A.-
dc.contributor.authorNenzi, P.-
dc.contributor.authorBalucani, M.-
dc.contributor.authorBondarenko, V. P.-
dc.date.accessioned2016-11-18T09:34:02Z-
dc.date.accessioned2017-07-27T12:19:22Z-
dc.date.available2016-11-18T09:34:02Z-
dc.date.available2017-07-27T12:19:22Z-
dc.date.issued2013-
dc.identifier.citationComparative study of initial stages of copper immersion deposition on bulk and porous silicon / H. Bandarenka [and other] // Nanoscale Research Letters. – 2013. – № 85. – P. 1 – 8.ru_RU
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/10125-
dc.description.abstractInitial stages of Cu immersion deposition in the presence of hydrofluoric acid on bulk and porous silicon were studied. Cu was found to deposit both on bulk and porous silicon as a layer of nanoparticles which grew according to the Volmer-Weber mechanism. It was revealed that at the initial stages of immersion deposition, Cu nanoparticles consisted of crystals with a maximum size of 10 nm and inherited the orientation of the original silicon substrate. Deposited Cu nanoparticles were found to be partially oxidized to Cu2O while CuO was not detected for all samples. In contrast to porous silicon, the crystal orientation of the original silicon substrate significantly affected the sizes, density, and oxidation level of Cu nanoparticles deposited on bulk silicon.ru_RU
dc.language.isoenru_RU
dc.publisherNanoscale Research Lettersru_RU
dc.subjectпубликации ученыхru_RU
dc.subjectPorous siliconru_RU
dc.subjectCopper nanoparticlesru_RU
dc.subjectImmersion depositionru_RU
dc.subjectElectron backscatter diffractionru_RU
dc.titleComparative study of initial stages of copper immersion deposition on bulk and porous siliconru_RU
dc.typeArticleru_RU
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