| DC Field | Value | Language |
|---|
| dc.contributor.author | Prischepa, S. L. | - |
| dc.contributor.author | Trezza, M. | - |
| dc.contributor.author | Cirillo, C. | - |
| dc.contributor.author | Sabatino, P. | - |
| dc.contributor.author | Carapella, G. | - |
| dc.contributor.author | Attanasio, C. | - |
| dc.date.accessioned | 2016-11-22T07:55:15Z | - |
| dc.date.accessioned | 2017-07-27T12:17:36Z | - |
| dc.date.available | 2016-11-22T07:55:15Z | - |
| dc.date.available | 2017-07-27T12:17:36Z | - |
| dc.date.issued | 2013 | - |
| dc.identifier.citation | Nonlinear current-voltage characteristics due to quantum tunneling of phase slips in superconducting Nb nanowire networks / M. Trezza and others / CNR-SPIN Salerno and Dipartimento di Fisica “E. R. Caianiello”, Universita degli Studi di Salerno, Fisciano (Sa) I-84084, Italy Minsk : Applied physics letters, 2013. – Pp. 252601. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/10161 | - |
| dc.description.abstract | We report on the transport properties of an array of N $ 30 interconnected Nb nanowires,
grown by sputtering on robust porous Si substrates. The analyzed system exhibits a broad resistive transition in zero magnetic field, H, and highly nonlinear V(I) characteristics as a function of H, which can be both consistently described by quantum tunneling of phase slips. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | Applied physics letters | ru_RU |
| dc.subject | публикации ученых | ru_RU |
| dc.subject | nonlinear current-voltage characteristics | ru_RU |
| dc.subject | quantum tunneling | ru_RU |
| dc.subject | superconducting Nb nanowire networks | ru_RU |
| dc.title | Nonlinear current-voltage characteristics due to quantum tunneling of phase slips in superconducting Nb nanowire networks | ru_RU |
| dc.type | Article | ru_RU |
| Appears in Collections: | Публикации в зарубежных изданиях
|
