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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/10161
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dc.contributor.authorTrezza, M.-
dc.contributor.authorCirillo, C.-
dc.contributor.authorSabatino, P.-
dc.contributor.authorCarapella, G.-
dc.contributor.authorPrischepa, S. L.-
dc.contributor.authorAttanasio, C.-
dc.date.accessioned2016-11-22T07:55:15Z-
dc.date.accessioned2017-07-27T12:17:36Z-
dc.date.available2016-11-22T07:55:15Z-
dc.date.available2017-07-27T12:17:36Z-
dc.date.issued2013-
dc.identifier.citationNonlinear current-voltage characteristics due to quantum tunneling of phase slips in superconducting Nb nanowire networks / M. Trezza [et al.] / Applied Physics Letters. – 2013. – Volume 103, Issue 25. – P. 252601.ru_RU
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/10161-
dc.description.abstractWe report on the transport properties of an array of N $ 30 interconnected Nb nanowires, grown by sputtering on robust porous Si substrates. The analyzed system exhibits a broad resistive transition in zero magnetic field, H, and highly nonlinear V(I) characteristics as a function of H, which can be both consistently described by quantum tunneling of phase slips.ru_RU
dc.language.isoenru_RU
dc.publisherApplied physics lettersru_RU
dc.subjectпубликации ученыхru_RU
dc.subjectnonlinear current-voltage characteristicsru_RU
dc.subjectquantum tunnelingru_RU
dc.subjectsuperconducting Nb nanowire networksru_RU
dc.titleNonlinear current-voltage characteristics due to quantum tunneling of phase slips in superconducting Nb nanowire networksru_RU
dc.typeArticleru_RU
dc.identifier.DOIhttp://dx.doi.org/10.1063/1.4851240-
Appears in Collections:Публикации в зарубежных изданиях

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