| DC Field | Value | Language |
|---|
| dc.contributor.author | Prischepa, S. L. | - |
| dc.contributor.author | Danilyuk, A. L. | - |
| dc.contributor.author | Trafimenko, A. G. | - |
| dc.contributor.author | Fedotov, A. K. | - |
| dc.contributor.author | Svito, I. A. | - |
| dc.date.accessioned | 2016-11-30T12:35:20Z | - |
| dc.date.accessioned | 2017-07-27T12:27:05Z | - |
| dc.date.available | 2016-11-30T12:35:20Z | - |
| dc.date.available | 2017-07-27T12:27:05Z | - |
| dc.date.issued | 2016 | - |
| dc.identifier.citation | Prischepa S. L. Negative differential resistance in n-type noncompensated silicon at low temperature / S. L. Prischepa and other // Applied Physics Letters. - 2016. - Vol. 109, No. 22. - Р. 222104 (1-4). | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/10529 | - |
| dc.description.abstract | We present the results on low temperature current-voltage characteristics of noncompensated Si doped by Sb. In the temperature range 1.9–2.25K and at electrical fields smaller than 1 V/cm, the negative differential resistance (NDR) was observed. The external magnetic field enhances the region of the NDR. We attribute this effect to the delocalization of the D- states in the upper Hubbard band due to the accumulation of the charge injected by current. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | American Institute of Physics | ru_RU |
| dc.subject | публикации ученых | ru_RU |
| dc.subject | variable range hopping | ru_RU |
| dc.subject | charge accumulation | ru_RU |
| dc.subject | upper Hubbard band | ru_RU |
| dc.title | Negative differential resistance in n-type noncompensated silicon at low temperature | ru_RU |
| dc.type | Article | ru_RU |
| Appears in Collections: | Публикации в зарубежных изданиях
|
