| DC Field | Value | Language |
|---|
| dc.contributor.author | Velichko, O. I. | - |
| dc.date.accessioned | 2016-12-28T08:28:08Z | - |
| dc.date.accessioned | 2017-07-13T06:36:44Z | - |
| dc.date.available | 2016-12-28T08:28:08Z | - |
| dc.date.available | 2017-07-13T06:36:44Z | - |
| dc.date.issued | 2016 | - |
| dc.identifier.citation | Velichko, O. I. Model of boron clustering in silicon / O. I. Velichko // Доклады БГУИР. – 2016. – № 8 (102). – С. 5 – 9. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/11046 | - |
| dc.description.abstract | The model of formation and dissolution of neutral boron clusters in silicon has been developed.
Numerical calculations showed that the model proposed describes well the experimental data
obtained for rapid thermal annealing. Agreement with experiment is observed for clusters
incorporating a small number (2-3) of boron atoms. The assumption about the increasing rate of
the reaction of cluster formation allows one to explain the experimentally observed phenomenon
of the hole concentration saturation at a high doping level. The increase in the reaction rate is a
result of the crystalline lattice deformation due to the mismatch between the boron and silicon
atomic radii. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | БГУИР | ru_RU |
| dc.subject | доклады БГУИР | ru_RU |
| dc.subject | boron | ru_RU |
| dc.subject | silicon | ru_RU |
| dc.subject | clustering | ru_RU |
| dc.subject | stresses | ru_RU |
| dc.subject | annealing | ru_RU |
| dc.title | Model of boron clustering in silicon | ru_RU |
| dc.type | Article | ru_RU |
| Appears in Collections: | №8 (102)
|
